In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained.
Kamali, M., & Hosseini, S. E. (2014). Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs. Journal Of Electrical Systems And Signals, 2(1), 21-26. doi: 10.22067/ess.v2i1.31860
MLA
Mohammadi Kamali; Seyed Ebrahim Hosseini. "Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs", Journal Of Electrical Systems And Signals, 2, 1, 2014, 21-26. doi: 10.22067/ess.v2i1.31860
HARVARD
Kamali, M., Hosseini, S. E. (2014). 'Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs', Journal Of Electrical Systems And Signals, 2(1), pp. 21-26. doi: 10.22067/ess.v2i1.31860
VANCOUVER
Kamali, M., Hosseini, S. E. Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs. Journal Of Electrical Systems And Signals, 2014; 2(1): 21-26. doi: 10.22067/ess.v2i1.31860
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