Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs

Document Type : Researsh Articles

Authors

Mohammadi Kamali ¹

Seyed Ebrahim Hosseini ²

¹ Hakim Sabzevari

² Ferdowsi University of Mashhad

10.22067/ess.v2i1.31860

Abstract

In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained.

Keywords

Tunnel FET

I_on/I_off ratio

Band-to-Band tunnelling

off-current

sub-threshold swing

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